发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND OPERATION METHOD THEREOF |
摘要 |
A multi-valued nonvolatile semiconductor storage device and an operation method thereof capable of setting a plurality of positive levels having positive threshold voltages and a plurality of negative levels having negative threshold voltages for storing information in a charge storage layer is provided. According to one aspect, there is provided a nonvolatile semiconductor storage device which comprises a storage element provided on a first surface of a semiconductor layer and including a charge storage layer provided with a plurality of positive levels having positive threshold voltages and a plurality of negative levels having negative threshold voltages to store information, and a back electrode provided on a second surface of the semiconductor layer to be opposite to the storage element, the back electrode being configured to apply a voltage which converts information stored in the negative level of the charge storage layer to information having a positive threshold voltage.
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申请公布号 |
US2009080250(A1) |
申请公布日期 |
2009.03.26 |
申请号 |
US20080211947 |
申请日期 |
2008.09.17 |
申请人 |
NISHIHARA KIYOHITO;ARAI FUMITAKA |
发明人 |
NISHIHARA KIYOHITO;ARAI FUMITAKA |
分类号 |
G11C16/06;G11C16/00;H01L29/788 |
主分类号 |
G11C16/06 |
代理机构 |
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地址 |
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