<p>Disclosed is a field effect transistor which has a practical carrier mobility, low threshold voltage and low energy consumption by using a specific organic compound as a semiconductor material. Specifically disclosed is a field effect transistor which is characterized in that a semiconductor layer is formed by using at least one compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X1 and X2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R1 and R2 independently represent a C1-C14 alkyl group. When both X1 and X2 are selenium atoms, R1 and R2 independently represent a C1-C4 alkyl group.)</p>
