| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a high power edge emission laser diode. SOLUTION: The structure of the high power edge emission laser diode has plural mode extension sublayers with a chirp periodic distribution. The Near Field Pattern (NFP) is formed in L shape, and the high intensity portion of a light field is nicely overlapped with a multiple quantum well. Thereby, a superior light confinement coefficient is acquired. Furthermore, the low intensity portion of the light field is extended to an n-type cladding layer as much as possible. Accordingly, the optical output density on a mirror surface of the high power edge emission laser diode is decreased and a vertical divergence angle is decreased, so as to prolong its lifetime. COPYRIGHT: (C)2009,JPO&INPIT
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