Low Wetting Hysteresis Polysiloxane-Based Material and Method for Depositing Same

摘要

A polysiloxane-based material presents a predetermined structure or conformation such that the polysiloxane-based material comprises a ratio between a number of linear -Si-O- bonds and a number of cyclic -Si-O- bonds less than or equal to 0.4, and preferably less than or equal to 0.3. Such a polysiloxane-based material enables a wetting hysteresis less than 10°, and preferably less than 5° to be obtained. Such a low wetting hysteresis material can be achieved by chemical vapor deposition enhanced by a plasma wherein a precursor is injected. The precursor is selected from the group consisting of cyclic organosiloxanes such as octamethylcyclotetrasiloxane and derivatives thereof and cyclic organosilazanes such as octamethylcyclosilazane and derivatives thereof. A ratio between a power density dissipated in the plasma and a precursor flow rate injected in the plasma is less than or equal to 100 W.cm-2/mol.min-1.