Procédé de fabrication d'un monocristal de silicium à type de conductibilité et paramètres électriques prédéterminés,申请号FR19590813170-传众专利搜索

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发明名称	Procédé de fabrication d'un monocristal de silicium à type de conductibilité et paramètres électriques prédéterminés
摘要
申请公布号	FR1243611(A)	申请公布日期	1960.10.14
申请号	FR19590813170	申请日期	1959.12.16
申请人	CKD MODRANY NARODNI PODNIK	发明人
分类号	C30B13/10;C30B13/22	主分类号	C30B13/10
代理机构		代理人
主权项
地址

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