发明名称 |
Multi-bit flash memory device including memory cells storing different numbers of bits |
摘要 |
A flash memory device comprises an array of memory cells capable of storing different numbers of bits per cell. A page buffer circuit for the flash memory device comprises a plurality of page buffers, each operating during programming, erasing, and reading operations of the memory cells. A control logic unit controls functions of the page buffers in accordance with the number of bits stored in corresponding memory cells.
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申请公布号 |
US7508732(B2) |
申请公布日期 |
2009.03.24 |
申请号 |
US20070657642 |
申请日期 |
2007.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KI-TAE;LEE YEONG-TAEK;KIM KI-NAM |
分类号 |
G11C13/04 |
主分类号 |
G11C13/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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