发明名称 |
Sense amplifier for low-supply-voltage nonvolatile memory cells |
摘要 |
A sense amplifier for nonvolatile memory cells includes a reference cell, a first load, connected to the reference cell, and a second load, connectable to a nonvolatile memory cell, both the first load and the second load having controllable resistance; a control circuit of the first load and of the second load supplies the first load and the second load with a control voltage irrespective of an operating voltage between a first conduction terminal and a second conduction terminal of the first load.
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申请公布号 |
US7508716(B2) |
申请公布日期 |
2009.03.24 |
申请号 |
US20040777457 |
申请日期 |
2004.02.12 |
申请人 |
PASOTTI MARCO;DE SANDRE GUIDO;IEZZI DAVID;POLES MARCO |
发明人 |
PASOTTI MARCO;DE SANDRE GUIDO;IEZZI DAVID;POLES MARCO |
分类号 |
G11C11/34;G11C7/00;G11C7/06;G11C7/14;G11C16/28 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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