发明名称 |
Epitaxial filled deep trench structures |
摘要 |
A method of forming and a structure of an electronic device. The method including: forming a trench in a single-crystal semiconductor substrate; forming a dopant diffusion barrier layer on sidewalls and a bottom of the trench; and epitaxially growing a single-crystal semiconductor layer in the trench, the single-crystal semiconductor layer filling the trench, the dopant diffusion barrier layer a barrier to diffusion of semiconductor dopants. Also a power transistor formed by the same method.
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申请公布号 |
US7507631(B2) |
申请公布日期 |
2009.03.24 |
申请号 |
US20060428983 |
申请日期 |
2006.07.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GREENE BRIAN JOSEPH;HOLT JUDSON ROBERT |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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