| 摘要 |
<p>A flash memory device and a manufacturing method thereof are provided to improve the operating speed by increasing the area of the floating gate and the coupling ratio. A semiconductor substrate(100) includes a trench(170). A gate stack comprises a tunneling oxide film(105), a floating gate(110), a dielectric layer pattern(120), and a control gate(130). The tunneling oxide film is formed along the inner wall of the trench. The floating gate, the dielectric layer pattern, the control gate are successively formed on the tunneling oxide film. The insulating side-wall covers both sides of the gate stack and a part of the semiconductor substrate. The source and drain region(150) is formed at both sides of the insulating side-wall and the gate stack. The channel is formed along the inner wall of the trench between source and drain region.</p> |
