发明名称 Silicon based optically degraded arc for lithographic patterning
摘要 An optically tuned SLAM (Sacrificial Light-Absorbing Material) may be used in a via-first dual damascene patterning process to facilitate removal of the SLAM. The monomers used to produce the optically tuned SLAM may be modified to place an optically sensitive structure in the backbone of the SLAM polymer. The wafer may be exposed to a wavelength to which the SLAM is tuned prior to etching and/or ashing steps to degrade the optically tuned SLAM and facilitate removal.
申请公布号 US7507521(B2) 申请公布日期 2009.03.24
申请号 US20040914605 申请日期 2004.08.09
申请人 INTEL CORPORATION 发明人 FLANIGAN KYLE Y.;DOMINGUEZ JUAN E.;KOVESHNIKOV SERGEI V.;PUTNA ERNISSE
分类号 G03F7/00;G03F7/004 主分类号 G03F7/00
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