发明名称 |
Silicon based optically degraded arc for lithographic patterning |
摘要 |
An optically tuned SLAM (Sacrificial Light-Absorbing Material) may be used in a via-first dual damascene patterning process to facilitate removal of the SLAM. The monomers used to produce the optically tuned SLAM may be modified to place an optically sensitive structure in the backbone of the SLAM polymer. The wafer may be exposed to a wavelength to which the SLAM is tuned prior to etching and/or ashing steps to degrade the optically tuned SLAM and facilitate removal.
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申请公布号 |
US7507521(B2) |
申请公布日期 |
2009.03.24 |
申请号 |
US20040914605 |
申请日期 |
2004.08.09 |
申请人 |
INTEL CORPORATION |
发明人 |
FLANIGAN KYLE Y.;DOMINGUEZ JUAN E.;KOVESHNIKOV SERGEI V.;PUTNA ERNISSE |
分类号 |
G03F7/00;G03F7/004 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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