| 摘要 |
A method for correcting the pattern critical dimension in photomask is provided to reduce the manufacturing cost of photomask by adjusting the critical dimension of a phase shift layer and a light shield layer on a substrate. A method for correcting the pattern critical dimension in photomask includes the step for forming a phase shift layer and a light shield layer on a light-shielding patterns and a phase-shifting patterns; the step for forming the first resist pattern on the light shield layer; the step for forming a preliminary light shield layer; the step for removing the first resist pattern from a semiconductor substrate; the step for forming the second resist pattern on the preliminary light shield layer; the step for forming a light shield pattern and a phase shift pattern; the step for removing the second resist pattern from the semiconductor substrate; the step for forming the third resist pattern on the light shield pattern; the step for removing the third resist pattern from the semiconductor substrate. |
