| 摘要 |
<p>A formation method of a metal wiring of a semiconductor device is provided to prevent the contact fail and reduce the resistance of the metal wiring by forming integrally the down metal wiring and the contact plug. The first contact plug(13) is formed within the contact hole of a protective film(12) on a semiconductor substrate(11). The first interlayer insulating film(14) and the first etch stopper layer are successively formed on the substrate. The first contact plug is exposed by selectively removing the first interlayer insulating film and the first etch stopper layer. The first barrier metal layer(17), the wiring metal layer(18), and the second barrier metal layer are evaporated successively on the substrate. The first barrier metal layer, the wiring metal layer and the second barrier metal layer are selectively removed. The second etch stopper layer and the second inter metal dielectric are evaporated on the substrate. The metal layer of the second contact plug part is exposed by chemical mechanical polishing process. The second contact plug(24) is formed with the metal wiring into one body.</p> |
