发明名称 |
MULTI-LAYERED MEMORY APPARATUS |
摘要 |
A multi-layered memory apparatus is provided to improve a data storage density by forming one or more memory layer by a plurality of sub arrays. A multi-layered memory apparatus includes two or more memory parts(12) and an active circuit part(11). The active circuit part includes a decoder, and is formed between the memory parts. The memory part includes one or more memory layer. The memory layer is a memory array of a cross point type, and has a plurality of sub arrays. The active circuit part is formed on a non-silicone substrate. The non-silicone substrate is made of plastic, glass, ceramic, oxide material, or nitride material.
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申请公布号 |
KR20090027561(A) |
申请公布日期 |
2009.03.17 |
申请号 |
KR20080047092 |
申请日期 |
2008.05.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
PARK, JAE CHUL;KWON, KEE WON;PARK, YOUNG SOO;LEE, SEUNG HOON;AHN, SEUNG EON |
分类号 |
G11C17/00;H01L21/8239;H01L23/12 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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