发明名称 MULTI-LAYERED MEMORY APPARATUS
摘要 A multi-layered memory apparatus is provided to improve a data storage density by forming one or more memory layer by a plurality of sub arrays. A multi-layered memory apparatus includes two or more memory parts(12) and an active circuit part(11). The active circuit part includes a decoder, and is formed between the memory parts. The memory part includes one or more memory layer. The memory layer is a memory array of a cross point type, and has a plurality of sub arrays. The active circuit part is formed on a non-silicone substrate. The non-silicone substrate is made of plastic, glass, ceramic, oxide material, or nitride material.
申请公布号 KR20090027561(A) 申请公布日期 2009.03.17
申请号 KR20080047092 申请日期 2008.05.21
申请人 SAMSUNG ELECTRONICS CO., LTD.;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 PARK, JAE CHUL;KWON, KEE WON;PARK, YOUNG SOO;LEE, SEUNG HOON;AHN, SEUNG EON
分类号 G11C17/00;H01L21/8239;H01L23/12 主分类号 G11C17/00
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