IC chip uniform delayering methods

摘要

Methods of uniformly delayering an IC chip are disclosed. One embodiment includes: performing an ash on the wafer including an Al layer thereof and etching the Al layer; polishing an edge of the wafer using a slurry including an approximately 30 mum polishing particles; removing the aluminum layer and at least one metal layer by polishing using a slurry including approximately 9 mum diamond polishing particles and a non-abrasive backside of a polishing sheet; removing any remaining metal layers to a first metal layer by polishing using a slurry including approximately 3 mum diamond polishing particles and the non-abrasive backside of a polishing sheet; removing any scratches by polishing using a slurry including approximately 1 mum diamond polishing particles and the non-abrasive backside of a polishing sheet; and removing the first metal layer to a polyconductor layer by polishing using a colloidal slurry including approximately 0.25 mum diamond polishing particles.