| 摘要 |
A method for forming dual gate insulation film is provided to form the oxide layer having deionized water before removing the photoresist pattern in advance and to prevent the contamination of the oxide film in the strip of photoresist pattern. The first gate insulating layer is formed on the semiconductor substrate including the cell region(C) and peripheral region(P). The mask pattern is formed and the first gate insulating layer of the peripheral area(P) is exposed. By using the mask pattern, the exposed part of the first gate insulating layer is removed. The oxide film(108) is formed in the peripheral area of result. The mask pattern is removed by using the wet etchant. The cell region and peripheral area are oxidized and the second gate insulating layer(110) is formed.
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