METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating the semiconductor device is provided to etch the nitride film by using the amorphous carbon layer as the etching barrier wall and to increase the patterning uniformity of the nitride film. The etched layer(22) is formed on the substrate(21). The amorphous carbon layer pattern(23A) is formed on the etched layer. The amorphous carbon layer pattern is used as the etching barrier wall. The etched layer is etched in the substrate temperature less than at least -10°C. The etched layer can be etched in the substrate temperature of the range of -10 °C through -30. The etched layer can be etched by using NF3 or the SF6 gas.