A photoelectric device is provided to increase the energy conversion efficiency by varying the composition of a plurality of light absorption layers. A photoelectric device includes a light absorption layer(200) and the first and second electrodes(E1,E2) which are electrically connected to the light absorption layer. The light absorption layer comprises GaInNAsP. The light absorption layer is formed on a silicon layer. The light absorption layer is a monolayer or multilayer consisting of GaInNAsP.
