| 摘要 |
A contact plug forming method of a semiconductor device is provided to perform the hard mask film formation process and the etching process at the same time for defining the second contact hole. A contact plug forming method of a semiconductor device includes the step for forming the first insulating layer(108) on a semiconductor substrate(100) having the first contact plug(110) in the peripheral circuit region; the step for exposing a junction region(104) to the cell region by etching the first insulating layer; the step for forming the contact hole in which the first contact plug is exposed to the peripheral circuit region; the step for forming the second contact plug(116) within the contact hole; the step for removing the second contact plug formed within the contact hole of the peripheral circuit region; the step for forming a spacer(120) in the contact hole sidewall; the step for forming the third contact plug(124) within the contact hole.
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