| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element capable of improving the signal-to-noise ratio by suppressing the dark current. <P>SOLUTION: The photoelectric conversion element includes a lower electrode 101, an upper electrode 104, and an organic photoelectric conversion layer 102 disposed in between them, where the upper electrode 104 being an electrode for capturing electrons generated by the organic photoelectric conversion layer 102 and the lower electrode 101 which is an electrode for capturing holes generated by the organic photoelectric conversion layer 102. A hole-blocking layer 103 is provided, made of silicon oxide and suppresses holes from being injected into the organic photoelectric conversion layer 102 from the upper electrode 104, while a bias voltage is applied between the upper electrode 104 and lower electrode 101, and the composition ratio of oxygen with respect to silicon in the silicon oxide is 0.5 to 1.2. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
