| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser and a manufacturing method thereof, in which the semiconductor laser can have an end face film for preventing generation of COD simply by a general semiconductor laser element manufacturing process. SOLUTION: This bluish purple semiconductor laser element 100 (semiconductor laser) includes a semiconductor substrate 10 having a cut-out face 10a on which a first region 11a constituted by a GaN layer 11 and a second region 12a constituted by an Al<SB>x</SB>Ga<SB>(1-x)</SB>N layer 12 made of a material different from that of the GaN layer 11 and joined with the GaN layer 11 are disposed in stripes and a semiconductor laser device layer 20 having a device center part formed on the first region 11a on the cut-out face 10a and a device end face part having a resonator surface 20a formed on the second region 12a on the cut-out face 10a. A band gap E<SB>2</SB>in a region 20d (a region 22b of an active layer 22) having the resonator surface 20a is larger than a band gap E<SB>1</SB>in a region 20e (a region 22a of the active layer 22). COPYRIGHT: (C)2009,JPO&INPIT
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