发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compact and thin semiconductor device and a method of manufacturing the same, in which reliability on electrical conduction of electrodes when mounted and mass-productivity of the semiconductor device are improved. <P>SOLUTION: This semiconductor device has an island portion 2a loaded with a semiconductor element S and one or more electrode portions 2b. After electrically connecting the semiconductor S loaded on the island portion 2a and the electrode portion 2b to each other, sealing is performed by using a resin so that each of back faces of the island portion 2a and the electrode portions 2b are exposed in the same surface as the bottom surface of a resin layer 4. The island portion 2a and the electrode portions 2b are respectively formed by electroforming into at least double-layer structure of a mounting metal thin film 11 on the back face side and a lead layer 12 integrally laminated on the top surface of the mounting metal thin film 11 so as to eliminate a necessity of plating an exposed surface of the electrode portion for other mounting in a following process, and electric conduction of electrodes in mounting and reliability can be thereby improved. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009055055(A) |
申请公布日期 |
2009.03.12 |
申请号 |
JP20080268083 |
申请日期 |
2008.10.17 |
申请人 |
KYUSHU HITACHI MAXELL LTD;TOREX SEMICONDUCTOR LTD |
发明人 |
NAKAGAWA HIROSHI;KOBAYASHI YOSHIHIRO |
分类号 |
H01L23/12;H01L23/14;H01L21/56;H01L23/50 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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