| 摘要 |
In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.
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