| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ITO electrode to form by a sputter method a film of ITO which maintains excellent ohmic contact resistance between the ITO film and a semiconductor electrode layer using GaN as a main material, which has low sheet resistance, and which is excellent in transparency and crystal quality, its manufacturing method, and a nitride semiconductor light-emitting element having the ITO electrode. <P>SOLUTION: There are provided an ITO electrode including a plurality of ITO films laminated and formed on a semiconductor layer using GaN as a main material by a vacuum deposition method and a sputter method, its manufacturing method, and a nitride semiconductor light-emitting element having the ITO electrode. <P>COPYRIGHT: (C)2009,JPO&INPIT |
