SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device containing quantum dots having different properties over a plurality of regions.

SOLUTION: The method comprises depositing a semiconductor layer over a semiconductor surface 1 having at least one first region 2 with a first (average surface lattice) parameter value and at least one second region 3 having a second parameter value different from the first parameter value. The semiconductor layer is deposited to a thickness to form self-organized islands 6 and 7. A capping layer 8 is deposited over the islands 6 and 7 and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands.

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