| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of rapidly, nondestructively and accurately evaluating a two-dimensional distribution of crystalline structure defects of a semiconductor sample consisting of a wide gap semiconductor. SOLUTION: The method of evaluating a two-dimensional distribution of crystalline structure defects of a semiconductor sample includes processes of: emitting photoluminescence light from the semiconductor sample by irradiating the semiconductor sample with light; and obtaining a two-dimensional distribution of the crystalline structure defects of the semiconductor sample by observing the emitted photoluminescence light. In the method, a semiconductor constituting the semiconductor sample is a wide gap semiconductor, and light for irradiating the semiconductor sample therewith has energy smaller than energy corresponding to a band gap of the wide gap semiconductor. COPYRIGHT: (C)2009,JPO&INPIT
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