COMPOSITE SUBSTRATE FOR FORMING LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE COMPOSITE SUBSTRATE

摘要

A uniform nitride buffer layer is formed over the entire surface of a substrate including both an Al2O3 phase and an oxide phase which has a garnet type structure and emits fluorescence, for forming a nitride semiconductor layer. A composite substrate for forming the light emitting element is composed of a light conversion material substrate and a nitride layer formed on the light conversion material substrate. The light conversion material substrate has a structure wherein at least two or more oxide layers are continuously and three-dimensionally entwined with each other. Each oxide layer includes the Al2O3 phase and at least one oxide phase which emits fluorescence. The nitride layer has a nitride layer including at least Al on an interface to the light conversion substrate, preferably, at least one layer of AlxGa1-xN (0<x=1).