| 摘要 |
A method for processing a substrate in a plasma processing chamber. The substrate is disposed above a chuck and surrounded by an edge ring while the edge ring being electrically isolated from the chuck. The method includes providing RF power to the chuck and providing an edge ring DC voltage control arrangement. The edge ring DC voltage control arrangement is coupled to the edge ring to provide first voltage to the edge ring, with the edge ring potential being one of a positive potential, a negative potential and a ground. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the edge ring DC voltage control arrangement is configured to cause the edge ring potential to be less than a DC potential of the substrate in an embodiment and to be substantially equal to the DC potential of the substrate in another embodiment. |
