METHOD OF MANUFACTURING MOS TRANSISTOR, AND MOS TRANSISTOR MANUFACTURED BY THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a MOS transistor, and to provide a MOS transistor manufactured by the same. SOLUTION: This method of manufacturing a MOS transistor includes a process for forming a gate pattern 120 on a semiconductor substrate 100 and a process for forming a spacer 134 covering a side wall of the gate pattern. The process for forming the gate pattern includes to provide a gate electrode 112a and a capping film pattern 118 layered in order, and the capping film pattern is formed with a lower capping film pattern 114b and an upper capping film pattern 116a layered in order, and the lower capping film pattern is formed to have a width smaller than that of the upper capping film pattern. COPYRIGHT: (C)2009,JPO&INPIT