Ge CHANNEL ELEMENT, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a Ge channel element small in hysteresis in a C-V characteristic. SOLUTION: The Ge channel element is composed of: a Ge channel layer (2); an interface layer (4) formed on the Ge channel layer (2) and containing Si; a La2O3layer (6) formed on the interface layer (4); and a conductive layer (8) formed on the La2O3layer (6); and Ge atoms are prevented from diffusing into the La2O3layer (6) by the interface layer (4) containing Si to prevent Ge oxide from being produced in the La2O3layer (6). COPYRIGHT: (C)2009,JPO&INPIT