| 摘要 |
<p>In a thin film capacitor, reducing a leak current by suppressing concentration of an electric filed. Forming a zirconium oxide layer ( 26 A) on a lower electrode ( 22 ) made of a conductive material. Forming a buffer layer ( 28 ) made of an amorphous material on the first zirconium oxide layer ( 26 A). Forming a second zirconium oxide layer ( 26 B) on the buffer layer ( 28 ), and forming an upper electrode ( 24 ) made of a conductive material on the second zirconium oxide layer ( 26 B)</p> |
