发明名称 |
MRAM Device with Continuous MTJ Tunnel Layers |
摘要 |
A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.
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申请公布号 |
US2009065883(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20070854478 |
申请日期 |
2007.09.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG YU-JEN;CHEN YOUNG-SHYING;KAO YA-CHEN;LIN CHUN-JUNG |
分类号 |
H01L29/82;H01L21/00 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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