发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>Provided are a novel method and a novel structure for bringing a Ge or SiGe compound and a metal into ohmic contact with each other. A semiconductor device is provided with a portion composed of only i) Ge or SiGe compound, ii) a metal, and iii) an insulator or a semiconductor arranged between the material i) and the metal ii). In the semiconductor device, A) the material i) and the metal ii) have Schottky junction in the case where the holes of the material i) are majority carriers, and/or B) the material i) and the metal ii) are in an ohmic contact when the electrons of the material i) are majority carriers.</p> |
申请公布号 |
WO2009031502(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
WO2008JP65688 |
申请日期 |
2008.09.01 |
申请人 |
THE UNIVERSITY OF TOKYO;TORIUMI, AKIRA;NISHIMURA, TOMONORI |
发明人 |
TORIUMI, AKIRA;NISHIMURA, TOMONORI |
分类号 |
H01L21/28;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|