发明名称 |
Thin gate stack structure for non-volatile memory cells and methods for forming the same |
摘要 |
Embodiments are described for reducing the programming voltage of a memory cell in a memory device. The memory cell includes a channel region extending between first and second diffusion regions formed in a substrate. A tunnel dielectric material is formed over the channel region. A storage medium is formed over the tunnel dielectric material to store electrical charge. The storage medium is disposed between a first interface material and a second interface material, each interface material provides a smoother interface between the storage medium and surrounding dielectric materials. A charge blocking material is formed over the storage medium, followed by a control gate material.
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申请公布号 |
US2009067256(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20070899644 |
申请日期 |
2007.09.06 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BHATTACHARYYA ARUP;DERDERIAN GARO |
分类号 |
G11C11/34;H01L21/336;H01L29/788 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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