| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to easily secure the Interval between the bit line contact holes by forming the insulating layer between the neighboring gate taps. A manufacturing method of a semiconductor device includes the step of forming a gate insulating layer(15) and a gate conductive film(16) in a substrate(11) having the element isolation region and active area; the step that selectively etches the gate conductive film and the gate insulating layer and forms a plurality of slits(14); the step of forming an insulating layer in the front side to reclaim the slit; the step of forming a gate electrode having a gate tap by etching the insulating layer, the gate conductive film and the gate insulating layer selectively; the step of leaving the insulating layer reclaimed to the slit.</p> |
