| 摘要 |
The piezoelectric device (10) includes a piezoelectric film (18) that expands or contracts according to variations in voltage applied, a first electrode (16) provided on a first side of the film, and a second electrode (20) provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of Pb x B y O z . An element at site B is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and 0<x‰¤1, 0<y‰¤1, and 2.5<z‰¤3. A first value of x/y in a first area of the film 100 nm apart from a surface of contact with the second electrode toward the first electrode ranges from 0.8 to 1.6 or is 0.7 times or more but not greater than 1.5 times a second value of x/y in a center area of the film, or the first area has a ratio of perovskite peaks to pyrochlore peaks as measured by XRD of 0.2 or more. |
