发明名称 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, a first undoped InGaN layer 7, a second undoped InGaN layer 8, and a p-type Gan-based contact layer 9 are stacked on a sapphire substrate 1. A p-electrode 10 is formed on the p-type Gan-based contact layer 9. An n-electrode 11 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The first undoped InGaN layer 7 is formed to contact a well layer closest to a p-side in the active layer having a quantum well structure, and subsequently the second undoped InGaN layer 8 is formed thereon. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the first and second undoped InGaN layers 20 nm or less.
申请公布号 EP2034523(A1) 申请公布日期 2009.03.11
申请号 EP20060746880 申请日期 2006.05.26
申请人 ROHM CO., LTD. 发明人 NAKAHARA, KEN;ITO, NORIKAZU;TSUTSUMI, KAZUAKI
分类号 H01L33/32;H01L33/02;H01L33/06;H01S5/343 主分类号 H01L33/32
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