发明名称 Semiconductor device fabrication method and fabrication apparatus using a stencil mask
摘要 A semiconductor device fabrication method includes preparing a substrate having a first circuit pattern of a semiconductor device; providing a mask with at least part of second circuit pattern of the semiconductor device; collimating incident direction of particles; changing at least one of the a substrate angle between a vertical axis of the substrate and the incident direction of the particles and a mask angle between a vertical axis of the mask and the incident direction so that the second circuit pattern on the mask can be aligned to the first circuit pattern on the substrate with a design margin; and selectively irradiating the particles to the substrate using the mask.
申请公布号 US7501214(B2) 申请公布日期 2009.03.10
申请号 US20040969181 申请日期 2004.10.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIBATA TAKESHI
分类号 G03F7/20;G03F9/00;A61N5/00;G03C5/00;G21G5/00;H01J37/317;H01L21/027;H01L21/265;H01L21/266;H01L21/68 主分类号 G03F7/20
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