发明名称 |
Semiconductor device fabrication method and fabrication apparatus using a stencil mask |
摘要 |
A semiconductor device fabrication method includes preparing a substrate having a first circuit pattern of a semiconductor device; providing a mask with at least part of second circuit pattern of the semiconductor device; collimating incident direction of particles; changing at least one of the a substrate angle between a vertical axis of the substrate and the incident direction of the particles and a mask angle between a vertical axis of the mask and the incident direction so that the second circuit pattern on the mask can be aligned to the first circuit pattern on the substrate with a design margin; and selectively irradiating the particles to the substrate using the mask.
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申请公布号 |
US7501214(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20040969181 |
申请日期 |
2004.10.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIBATA TAKESHI |
分类号 |
G03F7/20;G03F9/00;A61N5/00;G03C5/00;G21G5/00;H01J37/317;H01L21/027;H01L21/265;H01L21/266;H01L21/68 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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