发明名称 |
Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method |
摘要 |
In one embodiment, a semiconductor device includes a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer may be formed from an amorphous semiconductor material. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.
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申请公布号 |
US7501673(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20050214680 |
申请日期 |
2005.08.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JAE-HWA;PARK HEE-SOOK;KIM DAE-YONG;LEE JANG-HEE |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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