| 摘要 |
It is possible to detect a crack or scratch existing in a wafer silicon layer easily and in a short time. A scratch check device includes: a coil sensor arranged at a predetermined distance from a silicon surface; a high frequency application unit for applying a high frequency to the coil sensor; a scan mechanism unit for relatively moving the silicon layer and the coil sensor while maintaining the distance between the surface of the silicon layer and the coil sensor; and a crack detection unit for detecting a crack or a scratch existing in the silicon layer by detecting a change of a signal outputted from the coil sensor or a change of the high frequency applied from the high frequency application unit. The high frequency applied to the high frequency application unit is set to 5 MHz to 200 MHz. This enables a scratch check in the silicon layer which has been impossible conventionally. When the silicon in which a scratch check is to be performed has a low resistance, the frequency applied is set to 0.5 MHz to 200 MHz.
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