Reflective layer buried in silicon and method of fabrication

摘要

A silicon wafer having a distributed Bragg reflector buried within it. The buried reflector provides a high efficiency, readily and accurately manufactured reflector with a body of silicon. A photodetector using the buried layer to form a resonant cavity enhancement of the silicon's basic quantum efficiencies and selectivity is provided. The DBR is created by bonding of two or more substrates together at a silicon oxide interface or an oxide-oxide interface. In the former, an hydrogen implant is used to cleave silicon just above the bond line. In the latter, the bonding is at the oxide layers.