发明名称 Method of fabricating a reflective electrode for a semiconductor light emitting device
摘要 A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in electrical contact with the active layer. The process involves depositing an intermediate layer of electrically conductive material on the cladding layer and causing at least a portion of the electrically conductive material to diffuse into the cladding layer. The process further involves depositing a reflective layer on the intermediate layer, the reflective layer being electrically conductive and in electrical contact with the intermediate layer.
申请公布号 US7501295(B2) 申请公布日期 2009.03.10
申请号 US20060420337 申请日期 2006.05.25
申请人 PHILIPS LUMILEDS LIGHTING COMPANY, LLC 发明人 ZHOU LING
分类号 H01L21/00;H01L33/32;H01L33/40 主分类号 H01L21/00
代理机构 代理人
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