CHARGED COUPLED DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

A solid imaging device and manufacturing method thereof are provided to form the insulating layer of the transistor included in the drive part comprising the output amplification part with the oxide film and to improve the Gm(drain current change amount / variation amount of gate voltage) property. The light receiving portion converts the incident light to electrons by the photoelectric conversion. The charge transport unit(10) transmits the produced electric charges. The output amplification unit(40) detects the electric charges and generates the electric signal. The gate insulating layer(14) is formed on the channel of the charge transport unit. The gate insulating layer(25) formed in the load part(20) comprising the output amplification unit is comprised of the oxide film(25a), and the nitride film(25b) and oxide film(25c).