发明名称 Semiconductor device, method of manufacturing the same, and phase shift mask
摘要 A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in "L" shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.
申请公布号 US7498659(B2) 申请公布日期 2009.03.03
申请号 US20060352273 申请日期 2006.02.13
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 WATANABE KENICHI;KAWANO MICHIARI;NAMBA HIROSHI;SUKEGAWA KAZUO;HASEGAWA TAKUMI;SAWADA TOYOJI
分类号 G03F1/08;H01L23/544;G03F1/00;G03F1/32;G03F1/68;H01L21/027;H01L21/3205;H01L21/66;H01L21/768;H01L21/822;H01L23/00;H01L23/52;H01L23/522;H01L23/58;H01L27/04 主分类号 G03F1/08
代理机构 代理人
主权项
地址
您可能感兴趣的专利