| 摘要 |
A method for forming a thin film of a semiconductor device, which may include at least one of the following steps: Forming a Tantalum Nitride (TaN) film over a semiconductor substrate by atomic layer deposition. Forming a Tantalum (Ta) film by converting at least a portion of a Tantalum Nitride (TaN) film into Tantalum (Ta) by soaking the TaN film in a diluted HNO3 solution.
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