| 摘要 |
A thin film transistor of an LCD device and a fabrication method thereof fabricates the thin film transistor of the LCD device including a source electrode unit of 'U' shape and a drain electrode of straight line shape formed as entering into a concave portion of the source electrode and a channel layer formed between the source electrode and a longer side of the drain electrode in fabricating the thin film transistor using a slit mask, and thereby, the LCD having even device property can be fabricated and inferiority such as short-circuit of the channel can be solved.
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