NON-VOLATILE MEMORY DEVICE HAVING CHARGE TRAP LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

A non-volatile memory device and a manufacturing method thereof are provided to prevent the leakage of electric charge and the delay of operating speed by trapping the electric charge to the deformity level of the specific energy level. A gate structure(20) comprises a charge trapping layer(23) including a crystalline substance. The charge trapping layer comprises the crystalline substance formed on a tunneling insulating layer(21). A blocking insulation layer(25) is formed on the charge trapping layer. A gate electrode(27) is formed on the blocking insulation layer. The first and second impurity regions(13,15) are formed in a substrate(11) in order to contact the tunneling insulating layer. The gate electrode comprises the TaN metal layer. The charge trapping layer comprises the crystalline silicon nitride.