| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric conversion device in which a desired crystallization rate can be obtained without lowering a filming speed when an n-type amorphous silicon layer is provided on an i-type amorphous silicon layer. <P>SOLUTION: The manufacturing method of the photoelectric conversion device includes a (p) layer formation process of forming a p-type amorphous silicon layer, an (i) layer formation process of forming the i-type amorphous silicon layer on the p-type amorphous silicon layer, and an (n) layer formation process of forming the n-type amorphous silicon layer on the i-type amorphous silicon layer, and the (n) layer formation process includes a first (n) layer formation process of forming a first (n) layer on the i-type amorphous silicon layer, and a second (n) layer formation process of forming a second (n) layer on the first (n) layer, filming conditions of the first (n) layer formation process being defined to be higher in crystallization rate than conditions of the second (n) layer formation process on condition that the layers are formed on the same foundation substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
