| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device, which can improve a characteristic in an n-type impurity region and can maintain an ohmic characteristic in a p-type impurity region even under the same ohmic electrode forming condition and to provide a silicon carbide semiconductor device. SOLUTION: Since a first interlayer insulating film 12 is not directly brought into contact with the p-type impurity region 7 by forming on the p-type impurity region 7 a second interlayer insulating film which does not comprise phosphorus when the first interlayer insulating film 12 comprising phosphorus is used, diffusion of phosphorus to the p-type impurity region 7 from the first interlayer insulating film 12 is prevented in the manufacturing method of the silicon carbide semiconductor device. Thus, ohmic property of p-type contact is prevented from deteriorating. A phosphorus diffusion impurity region 13 where phosphorus is diffused in the n-type impurity region 5 can be formed by bringing the first interlayer insulating film 12 comprising phosphorus into contact with the n-type impurity region 5 so as to heat-treat it. Then, an ohmic electrode whose characteristic of n-type contact is improved can be formed. COPYRIGHT: (C)2009,JPO&INPIT
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