发明名称 |
Method for Manufacturing Epitaxial Wafer |
摘要 |
A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.
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申请公布号 |
US2009053894(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20070162732 |
申请日期 |
2007.01.24 |
申请人 |
KOYATA SAKAE;TAKAISHI KAZUSHIGE;HASHII TOMOHIRO;MURAYAMA KATSUHIKO;KATOH TAKEO |
发明人 |
KOYATA SAKAE;TAKAISHI KAZUSHIGE;HASHII TOMOHIRO;MURAYAMA KATSUHIKO;KATOH TAKEO |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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