发明名称 |
Strained Semiconductor Device and Method of Making Same |
摘要 |
A method of making a semiconductor device is disclosed. A semiconductor body, a gate electrode and source/drain regions are provided. A liner is provided that covers the gate electrode and the source/drain regions. Silicide regions are formed on the semiconductor device by etching a contact hole through the liner.
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申请公布号 |
US2009050972(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20070841516 |
申请日期 |
2007.08.20 |
申请人 |
LINDSAY RICHARD;TAN SHYUE SENG;KIM JOO-CHAN;KIM JUN JUNG;CHOI HYUNG-YOON;LAI CHUNG WOH;WIDODO JOHNNY |
发明人 |
LINDSAY RICHARD;TAN SHYUE SENG;KIM JOO-CHAN;KIM JUN JUNG;CHOI HYUNG-YOON;LAI CHUNG WOH;WIDODO JOHNNY |
分类号 |
H01L21/768;H01L21/336;H01L23/48;H01L29/78 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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